Low-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing

Abstract

In current quantum computers, most qubit control electronics are connected to the qubit chip inside the cryostat by cables at room temperature. This poses a challenge when scaling the quantum chip to an increasing number of qubits. We present a lateral nanowire network 1-to-4 demultiplexer design fabricated by selective area grown InGaAs on InP, suitable for on chip routing of DC current for qubit biasing. We have characterized the device at cryogenic temperatures, and at 40 mK the device exhibits a minimum inverse subthreshold slope of 2 mV/dec, which is encouraging for low power operation. At low drain bias, the transmission breaks up into several resonance peaks due to a rough conduction band edge; this is qualitatively explained by a simple model based on a 1D real space tight-binding nonequilibrium Green's functions model.