GEANT4 Microdosimetry Study of Ionising Radiation Effects in Digital ASIC’s

Abstract

Ionisation tracks on CMOS circuits produce the so called Single Event Effects (SEE). Measuring the absorbed energy per event in the micro-structures of an integrated circuit is difficult; therefore a Monte Carlo simulation can be useful. In this work, we present GEANT4 applications to simulate the incidence of charged particles on a CMOS flip-flop designed according to AMISC5 rules. The energy per event absorbed in the flip-flop transistors is calculated for the panoply of beams available at CNA (Spanish National Accelerator Centre): proton (18 MeV) and deuteron (9 MeV) beams produced by an IBA Cyclotron, and ion beams produced by a 3-MV NEC Pelletron accelerator (9 MeV alphas, 15 MeV carbon ions and 18 MeV oxygen ions).