Structure and Photoluminescence Properties of Sm3+ Ion-Doped LiSrBiTeO6 Phosphor

Abstract

A series of novel Sm3+-doped LiSrBiTeO6 red-emitting phosphors were prepared by the solid-state reaction method for the first time. Its crystal structure and luminescence are investigated. The excitation spectrum indicates that the LiSrBiTeO6:Sm3+ phosphor can be excited efficiently under 405 nm irradiation, which matches well with the output wavelength of UV LED chips. The photoluminescence spectrum of LiSrBiTeO6:Sm3+ phosphor shows four peaks assigned to the4G5/2 to6HJ (J = 5/2, 7/2, 9/2, and 11/2) transitions of Sm3+. The strong peak emits bright red luminescence at 645 nm. The luminescence intensity keeps increasing with increasing the content of Sm3+ to 5 mol%. The critical transfer distance of Sm3+ is calculated as 17 Å. All results indicated that LiSrBiTeO6:Sm3+ phosphors have potential application as red phosphors for near-UV chip-based white light-emitting diode and display devices.