Hot wall epitaxy of C60 thin films on mica

Abstract

Using high resolution x-ray diffraction, it is shown that hot wall epitaxy is an appropriate growth technique in order to obtain perfect monocrystalline C60 thin films with a thickness up to 150 nm. The full width at half-maximum of rocking curves of the C60 (111) reflex measured on such films is about 210 arcsec. Rocking curves of thicker films exhibit a complex shape, which is interpreted as a result of a change in the growth mode of C60 films exceeding a critical thickness.© 1995 American Institute of Physics.