Characterization of U-based thin films: The UFe2+x case

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Abstract

We have characterized UFe2+x films prepared by sputter deposition onto fused silica (SiO2) and Si(111) substrates with the film thickness ranging from 75 nm to 900 nm. The X-ray diffraction results showed an amorphous character of the deposited material. Some of the films showed in addition a pattern of highly textured cubic Laves phase. Rutherford Backscattering Spectroscopy with 2 MeV He+ ions has been used to determine the composition, thickness and concentration depth profile of the films. A large ageing affect was observed within 1 month after that the films were exposed to air. Magnetic measurements revealed TC increasing with relative Fe concentration and reaching approx. 450 K in UFe3.0.

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Kim-Ngan, N. T. H., Havela, L., Adamska, A. M., Daniš, S., Pešička, J., Macl, J., … Balogh, A. G. (2011). Characterization of U-based thin films: The UFe2+x case. In Journal of Physics: Conference Series (Vol. 303). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/303/1/012012

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