Abstract
Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al2O3, ZnO, SnO2, Nb2O5, HfO2, Ga2O3 and TiO2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy.
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CITATION STYLE
Tétreault, N., Heiniger, L.-P., Stefik, M., Labouchère, P. L., Arsenault, É., Nazeeruddin, N. K., … Grätzel, M. (2011). (Invited) Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells. ECS Transactions, 41(2), 303–314. https://doi.org/10.1149/1.3633681
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