Electrically pumped InP/GaAsP quantum dot lasers grown on (001) Si emitting at 750 nm

Abstract

Excellent performance of InAs quantum dot (QD) lasers grown on Si in the datacom and telecom bands has been reported in recent years. InP QD lasers on Si with emission wavelength at 650 nm–750 nm are seldom explored. In this paper, we report the growth and room temperature lasing of electrically pumped InP/GaAsP QD lasers directly grown on (001) Si emitting at 750 nm. The lowest threshold current density obtained is ∼650 A/cm 2 , measured on a 2 mm × 70 µm device. Moreover, the highest operating temperature of the InP QD laser grown on the GaAs/Si template is above 95°C. This 750 nm near red on-chip light source for the monolithic integration of Si photonics is potentially applicable in display, bio-photonics, and spatial mapping.