Theoretical analysis of continuous-wave Raman gain/lasing in silicon wire waveguides without carrier extraction scheme

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Abstract

Stimulated Raman scattering in silicon waveguides are attractive for optical amplification/lasing due to high Raman coefficient and high optical pump intensity in the small waveguide core. In this paper, we investigate the effect of two-photon absorption and free-carrier absorption for continuous-wave light propagation in submicron size silicon wire waveguides. We also show that if the waveguide lengths and pump powers are optimized, the net continuous-wave Raman gain and thus lasing activities in such waveguides without any additional free carrier extraction schemes is possible. © 2005, The Institute of Electronics, Information and Communication Engineers. All rights reserved.

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Liang, T. K., Nunes, L. R., Tsuchiya, M., & Tsuchiya, M. (2005). Theoretical analysis of continuous-wave Raman gain/lasing in silicon wire waveguides without carrier extraction scheme. IEICE Electronics Express, 2(16), 440–445. https://doi.org/10.1587/elex.2.440

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