Transmission electron microscopy study of interface and internal defect structures of homoepitaxial diamond

Abstract

Defect structures in a homoepitaxial diamond film grown by chemical vapor deposition have been studied by cross-sectional transmission electron microscopy. Many interstitial dislocation loops are discerned in the (001) interface. The internal region grown on the (11̄1) facet comprises stacking faults and twins, while that on the (001) face contains mainly interstitial dislocation loops aligned in rows along ∼〈112〉 directions. Fe and Si impurities were detected only at the interface by analytical electron microscopy. The origin of the defects is briefly discussed. © 1996 American Institute of Physics.