Abstract
Lithium insertion into amorphous WO3 films prepared by the electron beam evaporation technique was investigated by measurements of voltage-composition curve and chemical diffusion coefficient. The extraction of equilibrium and kinetic parameters allows the determination of the jump diffusion coefficient dependence on composition. In addition, first-principles calculations combining a pseudopotential plane wave scheme have been performed with the aim of providing a better understanding of the dependence of the potential barrier height for the hopping pathway with the insertion level for crystalline compounds. Our results predict a lowering of the barrier height for less doped systems and both experiments and simulations exhibit a relation of the type ΔE ∝ ckBT ln x for the composition range x < 0.3. © 2005 The Electrochemical Society. All rights reserved.
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CITATION STYLE
Gracia, L., García-Cañadas, J., Garcia-Belmonte, G., Beltrán, A., Andrés, J., & Bisquert, J. (2005). Composition dependence of the energy barrier for lithium diffusion in amorphous WO3. Electrochemical and Solid-State Letters, 8(10). https://doi.org/10.1149/1.2008868
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