Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O 3 insulator

Abstract

In this Letter, we report on sub-100 nm recessed In0.7Ga 0.3As metal-oxide-semiconductor field-effect transistors (MOSFETs) with outstanding logic and high-frequency performance. The device features ex-situ atomic-layer-deposition (ALD) 2-nm Al2O3 layer on a molecular-beam-epitaxy (MBE) 1-nm InP layer and is fabricated through a triple-recess process. An Lg 60 nm MOSFET exhibits on-resistance (RON) 220 Ω-μm, subthreshold-swing (S) 110 mV/decade, and drain-induced-barrier-lowering (DIBL) 200 mV/V at VDS 0.5 V, together with enhancement-mode operation. More importantly, this device displays record maximum transconductance (gm-max) 2000 μs/μm and current-gain cutoff frequency (fT) 370 GHz at VDS 0.5 V, in any III-V MOSFET technology. © 2012 American Institute of Physics.