Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

Abstract

It is demonstrated that it is possible to investigate details of the electronic structure of an internal atomic monolayer using soft-x-ray-emission spectroscopy. The local and partial density of states of one monolayer and three monolayers of Si, embedded deep below a GaAs(001) surface, was extracted. Clear differences to the density of states for bulk Si were observed. © 1995 The American Physical Society.