Conference Proceedings

Hot-Carrier Reliability of 0.1 μm Delta-Doped MOSFETs

  • NODA K
  • UCHIDA T
  • TATSUMI T
  • et al.
DOI: 10.7567/ssdm.1995.b-6-2
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NODA, K., UCHIDA, T., TATSUMI, T., & HU, C. (2015). Hot-Carrier Reliability of 0.1 μm Delta-Doped MOSFETs. Japan Society of Applied Physics. https://doi.org/10.7567/ssdm.1995.b-6-2

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