Abstract
This work has investigated the microstructure characteristics of high-quality alpha-Ga2O3 thin film grown on the Al2O3 single crystal substrate membrane. Hetero-epitaxial alpha Ga2O3 crystals reveal the formation of a three-fold symmetry at the initial stage of the growth by the oxygen template provided by the Al2O3. Inversion domains are found, and they have a 180° inverted configuration from the surroundings. These IDs lead to extra diffraction spots when observed along [110] and [010].
Cite
CITATION STYLE
Lee, Y. H., Yang, D., Gil, B., Sheen, M. H., Yoon, E., Park, Y., … Kim, Y. W. (2023). Origin of extra diffraction spots for high crystalline alpha-Ga2O3. AIP Advances, 13(2). https://doi.org/10.1063/5.0136783
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