Design and performance evaluation of all-inorganic AgTaS3 perovskite solar cells

Abstract

Narrow bandgap AgTaS3 perovskite can offer highly efficient thin film solar cells (SCs) and become Si counterparts that are leading in the market. Herein, we study the response of a n-CdS/p-AgTaS3/p+-Al0.8Ga0.2Sb device according to the variation of thickness, doping concentration, and defect densities in each layer using a solar cell capacitance simulator (SCAPS-1D). The optimized cell shows a VOC of 0.78 V, PCE of 27.89% accompanied by a JSC of 46.37 mA cm−2, and a fill factor of 77.06%, paving the way for novel double heterojunction perovskite photovoltaic (PV) cells with remarkable performance.