Fractional quantum Hall effect in CVD-grown graphene

Abstract

We show the emergence of fractional quantum Hall states in graphene grown by chemical vapor deposition (CVD) for magnetic fields from below 3 T to 35 T where the CVD-graphene was dry-transferred. Effective composite-fermion filling factors up to ν ∗ = 4 are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the p/3 fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.