High Current Density Vertical Nanowire TFETs with i > 1 μa/μm

Abstract

We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of 1.2~μ A/μ m , paving the way for low power applications. The transistor reaches a minimum subthreshold swing of 43 mV/dec at V_DS = 300 mV with a sub-60 mV/dec operation over a wide current range. Combined with a high transconductance of 205~μ S/μ m , the ON-current for the same device is 18.6~μ A/μ m at V_DS = 300 mV for I_OFF of 1 nA/ μ m.