Rectifying characteristic in all-perovskite oxide film p-n junction with room temperature ferromagnetism

Abstract

We fabricated an all-perovskite oxide p-n junction comprised of hole-doped (p-) manganite La0.9Ba0.1MnO3 and electron-doped (n-) titanate Sr0.99La0.01TiO3 films. The junction showed good rectifying properties at both room temperature and low temperature in a simple structure without inserting an insulating layer. By optimizing junction fabrication conditions, a thin La0.9Ba 0.1MnO3 layer in the junction exhibited room temperature ferromagnetism and metallic conduction, which may be modulated by carrier injection from the n-type layer under an electric field. These results indicate that this p-n junction may be developed into functional, strongly correlated electronic devices able to work at room temperature. © 2002 American Institute of Physics.