Gallium arsenide optical phased array photonic integrated circuit

Abstract

A 16-channel optical phased array is fabricated on a gallium arsenide photonic integrated circuit platform with a low-complexity process. Tested with a 1064 nm external laser, the array demonstrates 0.92° beamwidth, 15.3° grating-lobe-free steering range, and 12 dB sidelobe level. Based on a reverse biased p-i-n structure, component phase modulators are 3 mm long with DC power consumption of less than 5 µW and greater than 770 MHz electro-optical bandwidth. Separately fabricated 4-mm-long phase modulators based on the same structure demonstrate single-sided V π ·L modulation efficiency ranging from 0.5 V·cm to 1.22 V·cm when tested at wavelengths from 980 nm to 1360 nm.