Efficient gate control of spin-orbit interaction in InSb nanowire FET with a nearby back gate

Abstract

Electrical tuning of spin-orbit interaction (SOI) is important for spintronics. Here we report that InSb nanowire with a nearby back gate structure enables efficient tuning of the Rashba SOI with small gate voltage. Consequently, the Rashba coupling parameter is larger than those obtained for various previously reported III-V nanowire devices. Our findings demonstrate that InSb nanowire with this back gate structure will provide prominent and easy-to-use devices in the fields of spintronics and spin-orbitronics.