An Endpoint Detection System for Ion Beam Etching Using Optical Emission Spectroscopy

Abstract

An ion beam etching system with etching endpoint detection (EPD) capability based on optical emission spectroscopy (OES) was conceived, built, and tested. An expansion chamber was added on the right side of the etching chamber to fix the optical detector for in-situ detecting. In this system, the optical detector was mounted on a seven-shaped bracket, which was fixed by two straight guides, thus the position of the optical detector could be adjusted arbitrarily to collect the emission spectrum generated by the sample during the etching process. The signal was transmitted by optical fiber to the computer for processing, and the etching endpoint could be detected after analyzing the data. Firstly, we used simple substances (Al, Cr, Si, and Mg) to analyze the feasibility of the system and determine the best position of the optical detector. In addition, we also tested the detection limit of the system. Finally, a complex multilayer film sample with different materials was tested, and the results showed that the system could clearly detect the characteristic emission lines of different layers and had a good real-time performance and excellent endpoint detection capabilities.