In this study, the band structure of In2 O3 / N-InNbO4 composite was considered to be advantageous for the transportation and separation of photoexcited electron/hole pairs. This composite was synthesized and characterized by powder x-ray diffraction, UV-visible diffuse reflectance spectroscopy, transmission electron microscope, and x-ray photoelectrons spectroscopy. The photocatalytic experiments indicated the H2 evolution rate of In2 O3 / N-InNbO 4 composite was 27.3 μmol h-1 g-1 under visible light irradiation (λ > 420 nm), which was 18.6 times the rate of In2 O3 and 2.3 times the rate of N-InNbO4. © 2009 American Institute of Physics.
CITATION STYLE
Lv, J., Kako, T., Zou, Z., & Ye, J. (2009). Band structure design and photocatalytic activity of In2 O 3 / N-InNbO4 composite. Applied Physics Letters, 95(3). https://doi.org/10.1063/1.3183507
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