Growth Temperature Influence on the Luminescence of Eu,Si-Codoped AlN Phosphors

Abstract

Influence of the growth temperature on the luminescence properties of Eu,Si-codoped AlN was studied by means of SEM, XRD and CL. The Si and Eu concentrations were fixed at 2.2 and 0.1 at%, respectively, while the growth temperature was varied from 1600 to 1950°C. The synthesized Eu,Si-doped AlN powders emit in the ultraviolet range, with bands at 350 and 380 nm, and in the visible range, with bands at 460 and 560 nm. An increase of the 460 nm emission is observed with the temperature increase, while the 560 nm emission disappears above 1700°C. On the other hand, the luminescence distribution is strongly affected by the temperature. The luminescence variation is discussed in terms of dopants diffusion inside AlN grains. © 2013 The Electrochemical Society.