Abstract
Erbium (Er)- and ytterbium (Yb)-doped Si (Si:Er,Yb) thin films have been controllably synthesized over the Er and Yb concentrations ranging from 1018 to 1020 cm-3 by laser ablation technique. From the PL spectra and the concentration dependence of the intensity of Er3+ emission at 1.54 µm, Yb3+ acts as an efficient sensitizer of the Er3+-related PL. Enhancement by a factor of 1.5 due to Yb codoping is observed from the Si:Er,Yb films.
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CITATION STYLE
Kawai, S. (2013). Sensitization of Er3+ Emission in Er- and Yb-doped Si Thin Films by Laser Ablation. In 13th International Conference on Plasma Surface Engineering September 10 - 14, 2012, in Garmisch-Partenkirchen, Germany (Vol. 2, pp. 184–187). Linköping University Electronic Press. https://doi.org/10.3384/wcc2.184-187
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