SIMULATION OF HETERO-JUNCTION SILICON SOLAR CELLS

Abstract

Solar modules based on single crystal and polycrystalline silicon have al-most a 90% share of the total world market, primarily because of their stable, robust and re-liable characteristics. For these reasons, a great deal of attention is devoted to improving their characteristics and especially their efficiency. One of the many approaches includes HIT solar cells (hetero-junction solar cell with an intrinsic thin amorphous layer) fabricated at temperatures below 300 o C. In this paper, the electrical characteristics of HIT solar cells are simulated by using the TCAD Silvaco software package. The structure of HIT solar cell is optimized in order to obtain their maximum efficiency. In addition, the modifications of the simulation procedure, which allow the simulation of HIT solar cell, are described.