Current-voltage characteristics of poly(3-hexylthiophene) diodes at room temperature

Abstract

We report on the analysis of current-voltage characteristics of regioregular poly(3-hexylthiophene) diodes. Experimental curves were fitted to two models, to take into account at low-moderate electric fields Schottky behavior mixed with space charge limited current (SCLC) regime and, at higher fields, trap-free SCLC. The results provide a description of IV curves over five decades, along with the determination of zero field and effective mobility and the field dependence prefactor. Forward and reverse IV measurements highlighted the presence of shallow and deep localized states inside the band gap. The latter enhance the current over time and have been modeled as an inductorlike element. © 2009 American Institute of Physics.