An experimental study on the thermal stability of Mg2Si/Ni interface under thermal cycling

Abstract

Mg2Si is a promising eco-friendly thermoelectric material, and Ni is suited for electrical contact on it. In this study, Bi-doped Mg2Si ingots with Ni contacts were fabricated by co-sintering, and thermal stability was investigated by long-time (500 h, 500 cycles) temperature cycling from 25 °C to a peak temperature (Th = 400 and 450 °C) in N2. The as-sintered Ni/Mg2Si interfacial region is a multilayer consisting of Mg3Bi2, a series of MgxSiyNiz ternary compounds (ω, υ, ζ, and η-phases), and MgNi2. In the complex microstructure, the MgNi2 / η-phase interface was vulnerable to stress-induced voiding at Th = 450 °C, which arises from the mismatch of the thermal expansion coefficients. Interfacial voiding was avoided by adding 10 mol% Ag in Ni, which is probably due to the suppression of vacancy migration by the Ag-containing 2nd phase formation at the MgNi2/η-phase interface.