Low motional resistance lateral field extensional UHF MEMS resonator

Abstract

In this paper, we present lateral field extensional mode low motional resistance UHF MEMS resonator. The lowresistance is enabled in fundamental mode of resonator consisting of a piezoelectric transduction zinc oxide film on an underlying Si/SiO2 layer. The motional resistance of this device reduces as number of interdigited electrode increases. This is attributed to the increase in transduction area. The lowest measured motional resistance in this work is 73 Ω at 881 MHz. Our findings offer a multistandard single-chip solution. In a post CMOS process,these resonators could be deployed as filters for WCDMA, GSM, and DVB.