Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS

Abstract

We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, E c −0.4 eV and E c−0.7 eV. They were previously assigned to carbon interstitial (Ci) labeled as EH1/3 and silicon-vacancy (V Si) labeled as S1/2, for the low-energy electron and fast neutron irradiation, respectively. This work demonstrates how Laplace DLTS can be used as a useful tool for distinguishing the EH1 and S1 defects. We show that EH1 consists of a single emission line arising from the Ci(h), while S1 has two emission lines arising from the V Si(h) and V Si(k) lattice sites.