Growth of S-doped MoO2 nanosheets with a controlled bandgap by chemical vapor deposition

  • Feng L
  • Yan H
  • Zhang R
  • et al.
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Abstract

In this work, an investigation of MoO2 nanosheets grown on an SiO2/Si substrate using MoO3 and S powders as the raw materials by chemical vapor deposition was carried out. The HRTEM, XPS, and Raman results revealed that the S-doped MoO2 nanosheets were synthesized at a large scale, and the proportion of S and MoO3 precursors influenced the morphology of the nanosheets. Photoluminescence spectra exhibited fluorescent emissions from the MoO2 nanosheets at room temperature from defects and electron transitions between the valence and conduction bands. UV–visible absorption spectra showed that the bandgap of the MoO2 nanosheets can be controlled by the S doping concentration.

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Feng, L., Yan, H., Zhang, R., & Liu, J. (2018). Growth of S-doped MoO2 nanosheets with a controlled bandgap by chemical vapor deposition. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36(5). https://doi.org/10.1116/1.5027148

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