Abstract
This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have been performed in order to design their architecture. Some of these diodes have a breakdown voltage around 600 V. A comparison is made with similar diodes fabricated on off-cut grown layers. Computer simulations are used to explain lower breakdown voltages than those expected. © (2012) Trans Tech Publications.
Author supplied keywords
Cite
CITATION STYLE
Civrac, G., Laariedh, F., Thierry-Jebali, N., Lazar, M., Planson, D., Brosselard, P., … Scharnholz, S. (2012). 600 V PiN diodes fabricated using on-axis 4H silicon carbide. In Materials Science Forum (Vol. 717–720, pp. 969–972). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.717-720.969
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
