Temperature-dependent growth of topological insulator Bi2Se3for nanoscale fabrication

Abstract

Topological insulators and their characteristics are among the most highly studied areas in condensed matter physics. Bi2Se3 nanocrystals were synthesized via chemical vapor deposition at different temperatures on a silicon substrate with a gold catalyst. The effects of temperature on the obtained Bi2Se3 nanocrystals were systematically investigated. The size and length of Bi2Se3 nanocrystals change when the temperature increases from 500 °C to 600 °C. We found that the crystallization quality of the Bi2Se3 nanocrystals synthesized at 560 °C is optimal. At this temperature, we can get the desired thickness and length of the nanocrystals, which is quite suitable for nanoscale fabrication.