C-V Measurement of HfO2 Dielectric Layer Received by UV Stimulated Plasma Anodizing

Abstract

In this report we consider HfO2 dielectric layer received by UV stimulated plasma anodizing. This dielectric is distinguished by good electric parameters. For this purpose, it was used C-V characterization technic and calculate dielectric constant, flatband voltage, thrishold voltage, bulk potential, work function, oxide effective charge, charge concentration. The C-V measurement was carried out on Keithley Instrument-Semiconductor Parameter Analyzer 4200, oxide thickness was measured by reflectometer-MprobeVis System.