A 146 GHz Low Noise Amplifier with 19.65 dB Gain Using YZ-Embedding Gain Boosting Technique in 22-nm FDSOI Technology

Abstract

This study introduces a differential D-Band Low Noise Amplifier (LNA) with a unique four-stage design and YZ-embedding techniques. These features enable a substantial boost in gain performance, achieving 19.65 dB at 146 GHz. The design incorporates a neutralizing capacitor for Y-embedding network and source degeneration capacitors coupled with transmission lines for Z-embedding network. Leveraging gain-plane method to evaluate the effect of embedding networks on maximum available gain, simulation results demonstrate a noise figure (NF) of 7.65 dB and peak power consumption of 26.3 mW from a 0.9 V supply,