Landauer-Datta-Lundstrom Generalized Transport Model for Nanoelectronics

Abstract

The Landauer-Datta-Lundstrom electron transport model is briefly summarized. If a band structure is given, the number of conduction modes can be evaluated and if a model for a mean-free-path for backscattering can be established, then the near-equilibrium thermoelectric transport coefficients can be calculated using the final expressions listed below for 1 D , 2 D , and 3 D resistors in ballistic, quasiballistic, and diffusive linear response regimes when there are differences in both voltage and temperature across the device. The final expressions of thermoelectric transport coefficients through the Fermi-Dirac integrals are collected for 1 D , 2 D , and 3 D semiconductors with parabolic band structure and for 2 D graphene linear dispersion in ballistic and diffusive regimes with the power law scattering.