Fabrication Techniques and Electro-optical Properties of 4H-SiC Bluish-purple LEDs

Abstract

SiC bluish-purple light emitting diodes have been fabricated using a 4H-type off-angle SiC single-crystal substrate by the LPE method. Aluminum and nitrogen were used as acceptors and donnors, respectively. Aluminum was also added to n-type layers to produce D-A pair phosphors. Diffusion potential was 2.7 V which was 0.2 V larger than that of 6H-SiC blue LED. Brightness was 1 mcd at a forward current of 25 mA. Peak wavelength was 420 nm, and light output was 2 μW at 25 mA. Dependence of light output on large-pulse forward current (about 0.2∼1.5 A) is also described. © 1989, The Vacuum Society of Japan. All rights reserved.