Growth and properties of GaN and AlN layers on silver substrates

Abstract

We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN(11-22) orientation. An intermetallic phase of Ga3 Ag is found at the GaNAg interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current (∼ 10-3 A cm2). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices. © 2005 American Institute of Physics.