Temperature characteristic analysis of C-SenseFET integrated Feedback-MOS structure

Abstract

In this paper, a Feedback-MOS (FB-MOS) structure with C-SenseFET (FMC-SenseFET) is proposed. The FB-MOS region is connected to the Sense terminal of the C-SenseFET by the gate-drain short (diode) connection, which provides negative bias for the G2 terminal. When the temperature changes, the positive temperature characteristic of FB-MOS provides negative feedback for the current drift caused by the J-FET region, while the negative bias will change the width of the depletion layer in the J-FET region, which could further suppress the current drift. Compared with normal structure, the M (Current drift coefficient with temperature) of the charging current in the saturated region can be reduced by 53.8%, besides that, the proposed structure can generate a zero current drifting point at various temperatures in the linear region where the sampling function is realized, which could improve the temperature stability of C-SenseFET in two operating modes.