A two-step chemical vapor deposition process for the growth of continuous vertical heterostructure WSe2/h-BN and its optical properties

Abstract

The expansion of two-dimensional (2D) van der Waals heterostructure materials growth and synthesis leads to impressive results in the development and improvement of electronic and optoelectronic applications. Herein, a vertical WSe2/hBN heterostructure was obtainedviaa dual CVD system, in which prior to the WSe2growth a continuous monolayer hBN was obtained on a SiO2/Si substrate. Comparing growth on SiO2/Si and quartz substrates, we found that the underlayer of hBN leads to a desorption/diffusion process of tungsten (W) and selenium (Se) producing high-quality and large-area WSe2growth. In contrast with WSe2/SiO2and WSe2/quartz heterostructures, the photoluminescence properties of WSe2/hBN exhibit a sharp intense WSe2peak at 790 nm with a narrow full width at half-maximum (80 meV) due to no dangling bonds and dielectric effect of the hBN interface. The photoluminescence results suggest that the WSe2/hBN heterostructure has high crystallinity with a defect-free interface.