Abstract
A novel octagonal SiGe p-type intrinsic n-type (PIN) diode single pole single throw (SPST) switch is first implemented in a standard 0.18-μm SiGe BiCMOS technology. Distinctive radio frequency performance of monolithic silicon PIN diode switch is achieved for broadband applications with improvement of its geometry. Over the 2-16 GHz frequency band, the PIN diode SPST switch exhibits an insertion loss of less than l dB and isolation between 42 dB to 19 dB. An accurate small signal model of series PIN diode is also presented. © 2007 IEEE.
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CITATION STYLE
Sun, P., Upadhyaya, P., Jeong, D. H., Heo, D., & La Rue, G. S. (2007). A novel SiGe PIN diode SPST switch for broadband T/R module. IEEE Microwave and Wireless Components Letters, 17(5), 352–354. https://doi.org/10.1109/LMWC.2007.895706
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