Abstract
Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1MVm-1 by flexoelectricity, large enough to affect the physical properties of the film. Giant flexoelectric effects on ferroelectric properties are discussed in this overview of recent experimental observations. © 2012 The Royal Society.
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Lee, D., & Noh, T. W. (2012, October 28). Giant flexoelectric effect through interfacial strain relaxation. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences. Royal Society. https://doi.org/10.1098/rsta.2012.0200
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