Optimization design of 4H-SiC-based betavoltaic battery using 3H source

Abstract

This paper describes the theoretical calculation and optimization design of the PN junction betavoltaic batteries with 4H-SiC-based energy converter and titanium tritide source. The self-absorption of radioactive isotope sources and the energy deposition distribution in the semiconductor converter are simulated using the Monte Carlo method. The relationship between doping concentrations and basic factors such as minority carrier diffusion lengths and the width of the depletion region are analyzed via the calculation formulas. Then the maximum output power density and energy conversion efficiency are calculated. The optimal thickness of the titanium tritide film is about 0.7 μm, the doping concentrations are 2.5 × 1016 cm-3, and the junction depth of PN junction is 0.1 μm. The surface recombination velocities of electron and hole are 1 × 106 cm/s, respectively. The maximum output power density and energy conversion efficiency are 0.22 μW/cm2 and 2.37%, respectively.