Properties of B and P doped Ge nanowires

Abstract

An ab initio study of the formation and segregation energies of B and P doped Ge nanowires oriented along the [110] direction is performed for fully relaxed H-passivated nanowires. The authors found the preferential dopant positions and the associated formation energies. Edge positions are favorable positions for both types of dopants. In the presence of dangling bond defects P dopants will highly favor the edge positions near the dangling bond, thereby trapping the additional carrier. The results are compared with those found for doped Si nanowires. © 2007 American Institute of Physics.