Simulation and Optimization of Temperature Field in Large-Sized MOCVD Reactor by Resistance Heating

Abstract

The effect of the number of layers and the length of the heat shields on the heating efficiency and temperature distributions in the substrate have been studied by establishing the model of a single-piece 18-inch MOCVD reactor. The results show that the number of layers of the heat shields is directly proportional to the heating efficiency, decreasing the length of the thermal shield can reduce the standard deviation(STD) of the substrate temperature. When the length of the heat shields is 56mm, the coefficient of substrate temperature STD is 21.41 °C and the STD is about 45% lower than the traditional susceptor. An area within substrate radius of 200mm, the coefficient of substrate temperature STD is 2.64 °C and the STD is about 93% lower than the traditional susceptor. The results obtained will provide theoretical basis for developing the heating structure of large-sized MOCVD reactor.