Investigation of temperature dependence of radiation from semiconductor lasers and light emitting diodes

Abstract

The investigation of temperature dependences of the radiation from red semiconductor laser diodes and light emitting diodes (LEDs) made on the basis of AlGaInP quadruple solid solution has been carried out. Despite the fact that the basic reasons for the change in the wavelength of laser and LEDs radiation when the temperature changes are considered to be known, however, the details of this effect are not well understood. The research shows experimentally how the radiation wavelength changes with temperature changes in the range from -20 C to 40C for both a semiconductor laser and a LED. It was found that the rate of change in the radiation wavelength of the devices under study differs when the temperature changes. Two linear sections can be distinguished on the laser diode dependence of the wavelength on temperature X(T), while the LED has one section on the dependence X(T). The paper provides an explanation of the observed patterns based on the analysis of the possible influence of various factors. The study is relevant due to the fact that the devices under study are operated in the Arctic region, both at low and high temperatures, and there is insufficient information about the effect of temperature on the radiation characteristics of the studied devices.