Recovery curve for threshold-switching NbO2

Abstract

Threshold switching has been observed and studied in thin films of NbO x (x≃2) in the sandwich configuration and in a single-crystal device having both a gap and sandwich configuration. The recovery curve has been determined by measuring the reswitching voltage after a specific zero-voltage interruption time. Data indicate a maximum allowable interruption time of about 200 ns without a switch-off transition. This is interpreted as the distribution trapped-carrier lifetime for polycrystalline NbO2.