Abstract
We have investigated the growth of β-FeSi2 grains on Si(001) substrates with 90-nm-thick gold layer and its photoluminescence (PL) property. X-ray diffraction and scanning electron microscopy observations revealed that coarse island β-FeSi2 grains with sizes from several to tens of micrometers were formed on the Si surface. A clear PL spectrum for the β-FeSi2 grains was observed on as deposited sample by argon-ion laser irradiation to the Si substrate side. The values of the activation energy for a non-radiative recombination path were large, and indicated the formation of high-crystal-quality β-FeSi2 with a low-level non-radiative center without post-annealing. © 2011 Ceramic Society of Japan.
Cite
CITATION STYLE
Akiyama, K., Kaneko, S., Hirabayashi, Y., Yokomizo, K., & Itakura, M. (2011). Photoluminescence properties of β-FeSi2 grains on Si with coating Au layer. In IOP Conference Series: Materials Science and Engineering (Vol. 18). Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/18/8/082015
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.