Experimental investigation of 4H-SiC bulk crystal growth

Abstract

4H-SiC single crystal ingots up to 1 inch in diameter have been grown by the Modified Lely Method. A growth sequence is proposed. The polytype study by Raman spectroscopy has shown that, in our configuration, 4H ingots could be reproducibly obtained on the (0001)C face of a 4H-SiC seed. The ingot contamination by transition metals (Ti, V) is discussed in the light of low temperature photoluminescence.