A novel method of rf powder sputtering

Abstract

A new method of rf sputtering by which thin films of metals, semiconductors and insulators can be sputtered from their respective powders, has been successfully demonstrated. The films have been characterized for their surface and crystal structure using conventional methods of sem and tem. All the films are amorphous with a relatively smooth surface topography. The relative merits and demerits of the technique have been briefly discussed. © 1984 Indian Academy of Sciences.