Abstract
Thermal conductivity and temperature dependence of electrical resistivity of Al4SiC4-SiC sintered bodies at the temperature from 100°C to 1000°C were studied. Thermal conductivity of the bodies increased with the rich of SiC, and did not follow the law of mixture. Current-voltage characteristics of the bodies showed a linear relationship, and the characteristics have an ohmic region. Electrical resistivity, obtained from the current-voltage characteristics, increased with the rich of Al4SiC4, varied significantly depending on the temperature, and did not follow the law of mixture. Further, the difference of the electrical resistivity of the bodies was small at high temperature.
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Inoue, K., Mori, S., & Yamaguchi, A. (2003). Thermal conductivity and temperature dependence of electrical resistivity of Al4SiC4-SiC sintered bodies prepared by pulse electronic current sintering. Journal of the Ceramic Society of Japan, 111(1295), 466–470. https://doi.org/10.2109/jcersj.111.466
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